Low-field electron mobility in wurtzite InN
نویسندگان
چکیده
منابع مشابه
Electron-beam-induced damage in wurtzite InN
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Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7G0.2 eV) and for wurtzite GaN at (3.3G 0.2 eV) that are ascribed to the fundam...
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The electronic structure of wurtzite InN has been investigated by electron energy loss spectroscopy ~EELS!. Spectra of the nitrogen K edge and the indium M 4,5 edge have been measured and were compared with calculated partial, N 2p and In 5p conduction band density of states in InN. Excellent agreement on the relative positions of the characteristic peaks were obtained. From low-loss EELS the b...
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Electron mobility in GaN and InN are calculated, by solving Boltzmann equation using iteration model, as a function of temperature for carrier concentrations of 10 16 , 10 17 , and 10 18 cm -3 . Both GaN and InN have maximum mobility between 100 and 200 K, depending on the electron density. The theoretical maximum mobility in GaN and InN at 300 K are about 1000 and 4400 cm 2 V -1 s 1. We compar...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2166195